ZP2000- RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
2500-3500V
RRM
****************************************************************************************************************************************
GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
Features:
ZT65cT
. All Diffused Structure
. High Surge rating
. Blocking capability up to 3500 volts
. Ceramic Housing Hermetic Package
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
Device Type
ZP2000-25
ZP2000-26
ZP2000-28
ZP2000-30
ZP2000-32
ZP2000-35
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +150 oC.
V
(1)
V
(1)
RRM
RSM
2500
2600
2800
3000
3200
3500
2700
2800
3000
3200
3400
3700
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 150 oC.
(4) See parameter definition below:
i
IFM
di/dt
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
trr
0.25 I
R
Qrr
I
RM(REC)
Repetitive peak
reverse leakage
5 mA
60 mA (3)
IRRM
REVERSE RECOVERY CHARACTERIST
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
2000
3140
Typ.
Units Conditions
Sinewave, 180o , Tc =90℃
Average forward current
RMS forward current
A
A
Nominal value
10 msec (50Hz), sinusoidal wave-
Peak one cycle surge
(non repetitive) current
IFSM
28000
A
shape, 180o conduction, Tj = 150 ℃
4×106
1.55
I square t
I2t
VFM
VFO
rF
A2s
V
10 msec
Peak forward voltage
IFM= 3000A;Tj =25oC
Tj=150oC,I=0.5πIF(AV) to 1.5πIF(AV)
Tj=150oC,I=0.5πIF(AV) to 1.5πIF(AV)
Threshold voltage
0.86
V
Threshold voltage, Low-level
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
0.16
mΩ
A
IRM(REC)
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
Qrr
5000
μC
μs
trr
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