Datasheet > ZP2000-28

ZP2000-28

更新时间： 2024-09-30 15:18:55

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	208K
描述
D10C

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数据手册

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ZP2000-28 数据手册

ZP2000- RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

2500-3500V

RRM

****************************************************************************************************************************************

GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER

Features:

ZT65cT

. All Diffused Structure

. High Surge rating

. Blocking capability up to 3500 volts

. Ceramic Housing Hermetic Package

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

Device Type

ZP2000-25

ZP2000-26

ZP2000-28

ZP2000-30

ZP2000-32

ZP2000-35

All ratings are specified for Tj=25 ^oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +150 ^oC.

(1)

RRM

RSM

2500

2600

2800

3000

3200

3500

2700

2800

3000

3200

3400

3700

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 150 ^oC.

(4) See parameter definition below:

IFM

di/dt

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

trr

0.25 I

Qrr

RM(REC)

Repetitive peak

reverse leakage

5 mA

60 mA (3)

I_RRM

REVERSE RECOVERY CHARACTERIST

Conducting - on state

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

2000

3140

Typ.

Units Conditions

Sinewave, 180^o, Tc =90℃

Average forward current

RMS forward current

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

28000

shape, 180^oconduction, Tj = 150 ℃

4×10⁶

1.55

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak forward voltage

I_FM= 3000A;Tj =25^oC

Tj=150^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

Threshold voltage

0.86

Threshold voltage, Low-level

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

0.16

mΩ

I_RM(REC)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

Q_rr

5000

μC

μs

t_rr

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