ZP1350- RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
3600-4500V
RRM
****************************************************************************************************************************************
GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
Features:
ZT65cT
. All Diffused Structure
. High Surge rating
. Blocking capability up to 4500 volts
. Ceramic Housing Hermetic Package
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
Device Type
ZP1350-36
ZP1350-38
ZP1350-40
ZP1350-42
ZP1350-45
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +150 oC.
V
(1)
V
(1)
RRM
RSM
3600
3800
4000
4200
4500
3800
4000
4200
4400
4700
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 150 oC.
(4) See parameter definition below:
i
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
IFM
di/dt
trr
Repetitive peak
reverse leakage
5 mA
70 mA (3)
0.25 I
R
IRRM
Qrr
I
RM(REC)
REVERSE RECOVERY CHARACTERIST
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
1350
2119
Typ.
Units Conditions
Sinewave, 180o , Tc =100℃
Average value of on-state current
RMS value of on-state current
A
A
Nominal value
10 msec (50Hz), sinusoidal wave-
Peak one cycle surge
(non repetitive) current
IFSM
20250
A
shape, 180o conduction, Tj = 150 ℃
2×106
1.8
I square t
I2t
VFM
VFO
rF
A2s
V
10 msec
Peak on-state voltage
Threshold voltage
IFM= 3000A;Tj =25oC
Tj=150oC,I=0.5πIF(AV) to 1.5πIF(AV)
Tj=150oC,I=0.5πIF(AV) to 1.5πIF(AV)
0.95
0.22
V
Threshold voltage, Low-level
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
mΩ
A
IRM(REC)
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
Qrr
5000
μC
μs
trr
http://www.chinarunau.com
Page 1 of 2