Datasheet > ZP1350-35

ZP1350-35

更新时间： 2024-03-03 10:09:50

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	208K
描述
D8C

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ZP1350-35 数据手册

ZP1350-RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

2500-3500V

RRM

****************************************************************************************************************************************

GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER

Features:

ZT55cT

. All Diffused Structure

. High Surge rating

. Blocking capability up to 3500 volts

. Ceramic Housing Hermetic Package

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

Device Type

ZP1350-25

ZP1350-26

ZP1350-28

ZP1350-30

ZP1350-32

ZP1350-35

All ratings are specified for Tj=25 ^oC unless

otherwise stated.

(1)

RRM

RSM

2500

2600

2800

3000

3200

3500

2700

2800

3000

3200

3400

3700

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +150 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 150 ^oC.

(4) See parameter definition below :

IFM

di/dt

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

0.25 I

Qrr

RM(REC)

Repetitive peak

reverse leakage

5 mA

50 mA (3)

I_RRM

REVERSE RECOVERY CHARACTERIST

Conducting - on state

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

1350

2119

Typ.

Units Conditions

Sinewave, Tc =90℃

Average value of on-state current

RMS value of on-state current

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

18900

1.7×10⁶

1.60

shape, 180^oconduction, Tj = 150 ℃

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak on-state voltage

Threshold voltage

I_FM= 3000A;Tj =25^oC

Tj=150^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

0.88

Slope resistance

0.20

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

Q_rr

4500

μC

μs

t_rr

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