Datasheet > ZP1300-12

ZP1300-12

更新时间： 2024-11-29 15:19:15

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	209K
描述
D5C

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获取价格

数据手册

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ZP1300-12 数据手册

ZP1300- RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

600-1600V

RRM

****************************************************************************************************************************************

GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER

Features:

ZT40cT

. All diffused structure

. High surge rating

. Blocking capability up to 1600 volts

. Ceramic housing hermetic package

. Pressure assembled device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

Device Type

ZP1300-06

ZP1300-08

ZP1300-10

ZP1300-12

ZP1300-14

ZP1300-16

All ratings are specified for Tj=25 ^oC, unless otherwise stated

(1)

RRM

RSM

800

600

800

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +175^oC.

1000

1200

1400

1600

1800

1000

1200

1400

1600

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 175 ^oC.

(4) See parameter definition below :

IFM

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

di/dt

trr

0.25 I

Qrr

Repetitive peak reverse

leakage current

2 mA

50 mA (3)

RM(REC)

I_RRM

REVERSE RECOVERY CHARACTERIST

Conducting - on state

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

1300

2041

Typ.

Units Conditions

Sinewave 180^o, Tc =100℃

Average forward current

RMS forward current

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

14300

shape, 180^oconduction, Tj = 175 ℃

1×10⁶

1.25

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak forward voltage

Threshold voltage

I_FM= 1500A;Tj =25^oC

Tj=175^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

0.78

Slope resistance

0.21

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

Q_rr

2500

μC

μs

t_rr

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