Datasheet > ZP1100-18

ZP1100-18

更新时间： 2024-03-03 10:08:13

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	207K
描述
D5C

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ZP1100-18 数据手册

ZP1100- RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

1800-2400V

RRM

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GENERAL PURPOSE HIGH POWER STANDARDRECTIFIER

Features:

ZT40cT

. All diffused structure

. High surge rating

. Blocking capability up to 2400 volts

. Ceramic housing hermetic package

. Pressure assembled device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

Device Type

ZP1100-18

ZP1100-20

ZP1100-22

ZP1100-24

All ratings are specified for Tj=25 ^oC, unless otherwise stated

(1)

RRM

RSM

1800

2000

2200

2400

2000

2200

2400

2600

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +175^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 175^oC.

(4) See parameter definition below :

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

IFM

Repetitive peak reverse

leakage current

2 mA

60 mA (3)

di/dt

I_RRM

trr

0.25 I

Qrr

Conducting - on state

RM(REC)

REVERSE RECOVERY CHARACTERIST

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

1100

1727

Typ.

Units Conditions

Sinewave180^o,Tc =100℃

Average forward current

RMS forward current

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

13200

shape, 180^oconduction, Tj = 175℃

87×10⁴

1.3

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak forward voltage

Threshold voltage

I_FM= 1500A;Tj =25^oC

Tj=175^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

0.82

Slope resistance

0.285

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

Q_rr

2500

μC

μs

t_rr

http://www.chinarunau.com

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