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ZO-28F PDF预览

ZO-28F

更新时间: 2024-11-06 03:08:11
品牌 Logo 应用领域
GHZTECH 装置
页数 文件大小 规格书
2页 141K
描述
BIAS DEVICE Thermal Tracking

ZO-28F 数据手册

 浏览型号ZO-28F的Datasheet PDF文件第2页 
ZO-28/F  
BIAS DEVICE  
Thermal Tracking  
CASE OUTLINE  
GENERAL DESCRIPTION  
The ZO-28/F is a bias device designed to work with very high power BiPolar  
transistors, operating Class A and AB. It has extremely low source impedance  
and high current handling capability. The package may be physically mounted  
to the same heat sink as the RF transistor, providing very accurate thermal  
tracking.  
55GU  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC  
40 Watts  
Maximum Voltage and Current  
BVis  
Is  
Ic  
Injector to Supplier Voltage  
Supplier Current  
Controller Current  
35 Volts  
3.5 Amps  
0.3 Amps  
30  
Hfe  
Transistor Current Gain - Min  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to +150oC  
+200oC  
See Case Outline for Connections  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST  
MIN  
TYP  
MAX UNITS  
CONDITIONS  
Supplier - Controller Breakdown Ii = 0. Is = 5 mA  
Injector Open  
4
50  
Volts  
Volts  
Volts  
BVsco  
BViso  
BViss  
Hfe  
INjector - Supplier Breakdown  
Controller Opne  
Ii = 10 mA  
90  
Injector - Supplier Breakdown  
Controller Shorted  
Ii = 50 mA  
30  
DC Current Gain  
Ii = 1 A, Vis = 5 Volts  
Ii = 0A, Ic = 50 mA  
Vcr  
1.34  
Voltage Drop across Diodes  
Thermal Resistance  
1.4  
1.48  
4.37  
Volts  
oC/W  
θjc  
Initial Issue June, 1997  
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE  
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE  
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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