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ZNBR6000 PDF预览

ZNBR6000

更新时间: 2024-10-29 22:29:11
品牌 Logo 应用领域
捷特科 - ZETEX 控制器
页数 文件大小 规格书
10页 182K
描述
FET BIAS CONTROLLER

ZNBR6000 数据手册

 浏览型号ZNBR6000的Datasheet PDF文件第2页浏览型号ZNBR6000的Datasheet PDF文件第3页浏览型号ZNBR6000的Datasheet PDF文件第4页浏览型号ZNBR6000的Datasheet PDF文件第5页浏览型号ZNBR6000的Datasheet PDF文件第6页浏览型号ZNBR6000的Datasheet PDF文件第7页 
ZNBR4000 ZNBR4001  
ZNBR6000 ZNBR6001  
FET BIAS CONTROLLER  
DRAFT ISSUE A - DECEMBER 2000  
DEVICE DESCRIPTION  
These devices are unconditionally stable  
over the full working temperature with the  
FETs in place, subject to the inclusion of the  
recommended gate and drain capacitors.  
These ensure RF stability and minimal  
injected noise.  
The ZNBR series of devices are designed to  
meet the bias requirements of GaAs and  
HEMT FETs commonly used in satellite  
receiver LNBs, PMR, cellular telephones etc.  
with a minimum of external components  
and a VCC of 3-6V for improved efficiency.  
It is possible to use less than the devices full  
complement of FET bias controls, unused  
drain and gate connections can be left open  
circuit without affecting operation of the  
remaining bias circuits.  
With the addition of two capacitors and  
resistors the devices provide drain voltage  
and current control for a number of external  
grounded source FETs, generating the  
regulated negative rail required for FET gate  
biasing whilst operating from a single  
supply. This negative bias, at -3 volts, can  
also be used to supply other external  
circuits.  
In order to protect the external FETs the  
circuits have been designed to ensure that,  
under any conditions including power  
up/down transients, the gate drive from the  
bias circuits cannot exceed the range -2.5V  
to 0.7V. Furthermore if the negative rail  
experiences a fault condition, such as  
overload or short circuit, the drain supply to  
the FETs will shut down avoiding excessive  
current flow.  
The ZNBR4000/1 and ZNBR6000/1 contain  
four and six bias stages respectively. In  
setting drain current the ZNBR4000/1 two  
resistors allows individual FET pair control  
to different levels, the ZNBR6000/1 two  
resistors split control between two and four  
FETs. This allows the operating current of  
input FETs to be adjusted to minimise noise,  
whilst the following FET stages can  
separately be adjusted for maximum gain.  
The series also offers the choice of drain  
voltage to be set for the FETs, the  
ZNBR4000/6000 gives 2.2 volts drain whilst  
the ZNBR4001/6001 gives 2 volts.  
The ZNBR4000/1 and ZNBR6000/1 are  
available in QSOP16 and 20 pin packages  
respectively fortheminimumin devicessize.  
Device operating temperature is -40 to 70°C  
to suit a wide range of environmental  
conditions.  
FEATURES  
APPLICATIONS  
VCC of 3-6V for improved efficiency  
Satellite receiver LNBs  
Provides bias for GaAs and HEMT FETs  
Private mobile radio (PMR)  
Drives up to four or six FETs  
Cellular telephones  
Dynamic FET protection  
Drain current set by external resistor  
Regulated negative rail generator  
requires only 2 external capacitors  
Choice in drain voltage  
Wide supply voltage range  
QSOP surface mount package  
1

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