Datasheet > ZNBR4001

ZNBR4001

更新时间： 2024-10-29 22:27:51

品牌	Logo	应用领域
捷特科 - ZETEX		控制器
页数	文件大小	规格书
10页	182K
描述
FET BIAS CONTROLLER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ZNBR4001 数据手册

ZNBR4000 ZNBR4001

ZNBR6000 ZNBR6001

FET BIAS CONTROLLER

DRAFT ISSUE A - DECEMBER 2000

DEVICE DESCRIPTION

These devices are unconditionally stable

over the full working temperature with the

FETs in place, subject to the inclusion of the

recommended gate and drain capacitors.

These ensure RF stability and minimal

injected noise.

The ZNBR series of devices are designed to

meet the bias requirements of GaAs and

HEMT FETs commonly used in satellite

receiver LNBs, PMR, cellular telephones etc.

with a minimum of external components

and a V_CCof 3-6V for improved efficiency.

It is possible to use less than the devices full

complement of FET bias controls, unused

drain and gate connections can be left open

circuit without affecting operation of the

remaining bias circuits.

With the addition of two capacitors and

resistors the devices provide drain voltage

and current control for a number of external

grounded source FETs, generating the

regulated negative rail required for FET gate

biasing whilst operating from a single

supply. This negative bias, at -3 volts, can

also be used to supply other external

circuits.

In order to protect the external FETs the

circuits have been designed to ensure that,

under any conditions including power

up/down transients, the gate drive from the

bias circuits cannot exceed the range -2.5V

to 0.7V. Furthermore if the negative rail

experiences a fault condition, such as

overload or short circuit, the drain supply to

the FETs will shut down avoiding excessive

current flow.

The ZNBR4000/1 and ZNBR6000/1 contain

four and six bias stages respectively. In

setting drain current the ZNBR4000/1 two

resistors allows individual FET pair control

to different levels, the ZNBR6000/1 two

resistors split control between two and four

FETs. This allows the operating current of

input FETs to be adjusted to minimise noise,

whilst the following FET stages can

separately be adjusted for maximum gain.

The series also offers the choice of drain

voltage to be set for the FETs, the

ZNBR4000/6000 gives 2.2 volts drain whilst

the ZNBR4001/6001 gives 2 volts.

The ZNBR4000/1 and ZNBR6000/1 are

available in QSOP16 and 20 pin packages

respectively fortheminimumin devicessize.

Device operating temperature is -40 to 70°C

to suit a wide range of environmental

conditions.

FEATURES

APPLICATIONS

V_CCof 3-6V for improved efficiency

Satellite receiver LNBs

•

Provides bias for GaAs and HEMT FETs

Private mobile radio (PMR)

•

Drives up to four or six FETs

Cellular telephones

•

Dynamic FET protection

•

Drain current set by external resistor

•

Regulated negative rail generator

requires only 2 external capacitors

•

Choice in drain voltage

•

Wide supply voltage range

•

QSOP surface mount package

•

12 3 4 5 6 7...10

中文翻译

下载PDF

与ZNBR4001相关器件

型号	品牌	获取价格	描述	数据表
ZNBR4001Q16	ZETEX	获取价格	FET BIAS CONTROLLER
ZNBR6000	ZETEX	获取价格	FET BIAS CONTROLLER
ZNBR6000Q20	ZETEX	获取价格	FET BIAS CONTROLLER
ZNBR6001	ZETEX	获取价格	FET BIAS CONTROLLER
ZNBR6001Q20	ZETEX	获取价格	FET BIAS CONTROLLER
ZNBT-60-1W	MINI	获取价格	Bias-Tee Wideband, 2.5 to 6000 MHz
ZNBT-60-1W+	MINI	获取价格	Monitor TEE DC Block, 2.5MHz Min, 6000MHz Max, 2.2dB Insertion Loss-Max, ROHS COMPLIANT, C
ZNCL10IL	ZILOG	获取价格	ZMOTIONÂ® Lenses
ZNCL10R	ZILOG	获取价格	ZMOTIONÂ® Lenses
ZNCL10S	ZILOG	获取价格	ZMOTIONÂ® Lenses

与ZNBR4001相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

18
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

ZNBR4001

ZNBR4001 数据手册

与ZNBR4001相关器件

与ZNBR4001相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ZNBR4001

ZNBR4001 数据手册

与ZNBR4001相关器件

与ZNBR4001相关文章

您还可以找

您在本页遇到什么问题？