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ZNBG2001X10 PDF预览

ZNBG2001X10

更新时间: 2024-10-29 22:06:15
品牌 Logo 应用领域
捷特科 - ZETEX 控制器
页数 文件大小 规格书
7页 517K
描述
FET BIAS CONTROLLER

ZNBG2001X10 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:MSOP-10Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.04
模拟集成电路 - 其他类型:ANALOG CIRCUITJESD-30 代码:S-PDSO-G10
JESD-609代码:e3长度:3 mm
湿度敏感等级:1功能数量:1
端子数量:10最高工作温度:80 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.1 mm
最大供电电压 (Vsup):12 V最小供电电压 (Vsup):5 V
表面贴装:YES温度等级:OTHER
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
Base Number Matches:1

ZNBG2001X10 数据手册

 浏览型号ZNBG2001X10的Datasheet PDF文件第2页浏览型号ZNBG2001X10的Datasheet PDF文件第3页浏览型号ZNBG2001X10的Datasheet PDF文件第4页浏览型号ZNBG2001X10的Datasheet PDF文件第5页浏览型号ZNBG2001X10的Datasheet PDF文件第6页浏览型号ZNBG2001X10的Datasheet PDF文件第7页 
ZNBG2000  
ZNBG2001  
FET BIAS CONTROLLER  
DEVICE DESCRIPTION  
The ZNBG series of devices are designed to meet the  
bias requirements of GaAs and HEMT FETs  
commonly used in satellite receiver LNBs, PMR,  
cellular telephones etc. with a minimum of external  
components.  
It is possible to use less than the devices full  
complement of FET bias controls, unused drain and  
gate connections can be left open circuit without  
affecting operation of the remaining bias circuits.  
In order to protect the external FETs the circuits have  
been designed to ensure that, under any conditions  
including power up/down transients, the gate drive  
from the bias circuits cannot exceed the range -3.5V  
to 0.7V. Furthermore if the negative rail experiences a  
fault condition, such as overload or short circuit, the  
drain supply to the FETs will shut down avoiding  
excessive current flow.  
With the addition of two capacitors and a resistor the  
devices provide drain voltage and current control for  
2 external grounded source FETs, generating the  
regulated negative rail required for FET gate biasing  
whilst operating from a single supply. This negative  
bias, at -3 volts, can also be used to supply other  
external circuits.  
The ZNBG2000/1 contains two bias stages. A single  
resistor allows FET drain current to be set to the  
desired level. The series also offers the choice of  
drain voltage to be set for the FETs, the ZNBG2000  
gives 2.2 volts drain whilst the ZNBG2001 gives 2  
volts.  
The ZNBG2000/1 are available in MSOP10 packages  
for the minimum in devices size. Device operating  
temperature is -40 to 80°C to suit a wide range of  
environmental conditions.  
These devices are unconditionally stable over the full  
working temperature with the FETs in place, subject  
to the inclusion of the recommended gate and drain  
capacitors. These ensure RF stability and minimal  
injected noise.  
FEATURES  
APPLICATIONS  
Provides bias for GaAs and HEMT FETs  
Satellite receiver LNBs  
Drives up to two FETs  
Private mobile radio (PMR)  
Single in single out C Band LNB  
Cellular telephones  
Dynamic FET protection  
Drain current set by external resistor  
Regulated negative rail generator requires only 2  
external capacitors  
Choice in drain voltage  
Wide supply voltage range  
MSOP surface mount package  
ISSUE 1 - AUGUST 2001  
1

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