Datasheet > ZNBG2001

ZNBG2001

更新时间： 2024-10-29 22:06:51

品牌	Logo	应用领域
捷特科 - ZETEX		控制器
页数	文件大小	规格书
7页	517K
描述
FET BIAS CONTROLLER

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ZNBG2001 数据手册

ZNBG2000

ZNBG2001

FET BIAS CONTROLLER

DEVICE DESCRIPTION

The ZNBG series of devices are designed to meet the

bias requirements of GaAs and HEMT FETs

commonly used in satellite receiver LNBs, PMR,

cellular telephones etc. with a minimum of external

components.

It is possible to use less than the devices full

complement of FET bias controls, unused drain and

gate connections can be left open circuit without

affecting operation of the remaining bias circuits.

In order to protect the external FETs the circuits have

been designed to ensure that, under any conditions

including power up/down transients, the gate drive

from the bias circuits cannot exceed the range -3.5V

to 0.7V. Furthermore if the negative rail experiences a

fault condition, such as overload or short circuit, the

drain supply to the FETs will shut down avoiding

excessive current flow.

With the addition of two capacitors and a resistor the

devices provide drain voltage and current control for

2 external grounded source FETs, generating the

regulated negative rail required for FET gate biasing

whilst operating from a single supply. This negative

bias, at -3 volts, can also be used to supply other

external circuits.

The ZNBG2000/1 contains two bias stages. A single

resistor allows FET drain current to be set to the

desired level. The series also offers the choice of

drain voltage to be set for the FETs, the ZNBG2000

gives 2.2 volts drain whilst the ZNBG2001 gives 2

volts.

The ZNBG2000/1 are available in MSOP10 packages

for the minimum in devices size. Device operating

temperature is -40 to 80°C to suit a wide range of

environmental conditions.

These devices are unconditionally stable over the full

working temperature with the FETs in place, subject

to the inclusion of the recommended gate and drain

capacitors. These ensure RF stability and minimal

injected noise.

FEATURES

APPLICATIONS

•

Provides bias for GaAs and HEMT FETs

•

Satellite receiver LNBs

Drives up to two FETs

Private mobile radio (PMR)

Single in single out C Band LNB

Cellular telephones

Dynamic FET protection

Drain current set by external resistor

Regulated negative rail generator requires only 2

external capacitors

•

Choice in drain voltage

Wide supply voltage range

MSOP surface mount package

ISSUE 1 - AUGUST 2001

12 3 4 5 6 7

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