Datasheet > ZK200-30

ZK200-30

更新时间： 2024-11-19 15:18:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	223K
描述
D1A

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数据手册

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ZK200-30 数据手册

ZK200-RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

2000-3000V_RRM

****************************************************************************************************************************************

FAST RECOVERY RECTIFIER DIODE

Features:

ZT26aT

. All diffused structure

. High surge rating

. Blocking capability up to 3000 volts

. Soft recovery

. Ceramic housing hermetic package

. Pressure assembled device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

All ratings are specified for Tj=25 ^oC, unless otherwise stated

(1)

Device Type

ZK200/20

ZK200/22

ZK200/24

ZK200/26

ZK200/28

ZK200/30

RRM

RSM

2000

2200

2400

2600

2800

3000

2200

2400

2600

2800

3000

3200

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125^oC.

(4) See parameter definition below :

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

Repetitive peak reverse

leakage current

10 mA

15 mA (3)

I_RRM

Conducting - on state

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

200

Typ.

Units Conditions

Sinewave180^o,Tc =70℃

Average forward current

RMS forward current

314

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

3000

shape, 180^oconduction, Tj = 125℃

I square t

I²t

V_FM

I_RM(REC)

Q_rr

45000

A²s

8.3 msec and 10.0 msec

Peak forward voltage

2.40

I_FM= 600A; Duty cycle  0.01%

I_FM= 200 A; dIF/dt = 10 A/s;Tjmax

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

μC

μs

t_rr

* For guaranteed maximum values, contact factory

http://www.chinarunau.com

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