ZK1500-RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
2000-3000VRRM
****************************************************************************************************************************************
FAST RECOVERY RECTIFIER DIODE
Features:
ZT65cT
. All diffused structure
. High surge rating
. Blocking capability up to 3000 volts
. Soft recovery
. Ceramic housing hermetic package
. Pressure assembled device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
All ratings are specified for Tj=25 oC, unless otherwise stated
.
V
(1)
V
(1)
Device Type
RRM
RSM
ZK1500-20
ZK1500-22
ZK1500-24
2000
2200
2400
2600
2800
3000
2200
2400
2600
2800
3000
3200
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125oC.
(4) See parameter definition below :
ZK1500-26
ZK1500-28
ZK1500-30
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage current
15 mA
60 mA (3)
IRRM
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
1500
2355
Typ.
Units Conditions
Sinewave180o,Tc =70℃
Average forward current
RMS forward current
A
A
10 msec (50Hz), sinusoidal wave-
Peak one cycle surge
(non repetitive) current
IFSM
22500
A
shape, 180o conduction, Tj = 125℃
I square t
I2t
VFM
IRM(REC)
Qrr
2531000
A2s
V
8.3 msec and 10.0 msec
Peak forward voltage
2.60
IFM= 3000A; Duty cycle 0.01%
IFM = 1000 A; dIF/dt = 10 A/s;Tjmax
IFM = 1000 A; dIF/dt = 10 A/s;Tjmax
IFM = 1000 A; dIF/dt = 10 A/s;Tjmax
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
*
*
A
μC
μs
trr
8
* For guaranteed maximum values, contact factory
http://www.chinarunau.com
Page 1 of 2