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ZC823 PDF预览

ZC823

更新时间: 2024-11-12 22:07:43
品牌 Logo 应用领域
捷特科 - ZETEX 二极管变容二极管局域网
页数 文件大小 规格书
6页 142K
描述
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES

ZC823 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:O-PBCY-W2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.14Is Samacsys:N
最小击穿电压:25 V配置:SINGLE
二极管电容容差:20%最小二极管电容比:5
标称二极管电容:33 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODEJESD-30 代码:O-PBCY-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
最大功率耗散:0.3 W认证状态:Not Qualified
最小质量因数:200最大重复峰值反向电压:25 V
子类别:Varactors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM变容二极管分类:HYPERABRUPT
Base Number Matches:1

ZC823 数据手册

 浏览型号ZC823的Datasheet PDF文件第2页浏览型号ZC823的Datasheet PDF文件第3页浏览型号ZC823的Datasheet PDF文件第4页浏览型号ZC823的Datasheet PDF文件第5页浏览型号ZC823的Datasheet PDF文件第6页 
830 series  
SILICON 28V HYPERABRUPT VARACTOR DIODES  
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series  
Device Description  
A range of silicon varactor diodes for use in frequency control and  
filtering. Featuring closely controlled CV characteristics and high  
Q. Low reverse current ensures very low phase noise  
performance. Available in single or dual common cathode format  
in a wide rage of miniature surface mount packages.  
Features  
· Close tolerance C-V characteristics  
· High tuning ratio  
· Low IR (typically 200pA)  
· Excellent phase noise performance  
· High Q  
· Range of miniature surface mount packages  
Applications  
· VCXO and TCXO  
· Wireless communications  
· Pagers  
· Mobile radio  
*Where steeper CV slopes are required there is the 12V hyperabrupt range.  
ZC930, ZMV930, ZV930, ZV931 Series  
ISSUE 6 - JANUARY 2002  
1

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