Datasheet > Z2PK115H

Z2PK115H

更新时间： 2024-01-01 18:42:22

品牌	Logo	应用领域
智威 - ZOWIE		肖特基二极管
页数	文件大小	规格书
2页	66K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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Z2PK115H 数据手册

ZOWIE

Schottky Barrier Diode

(150V / 1.0A)

Z2PK115H

FEATURES

OUTLINE DIMENSIONS

Halogen-free type

Case : Z2PAK

Unit : mm

Compliance to RoHS product

Lead less chip form, no lead damage

Low power loss, High efficiency

High current capability, low VF

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

3.40 ± 0.2

0.05

Patented ZPAK^TMPackage Technology

0.70 ± 0.2

APPLICATION

Switching mode power supply applications

Portable equipment battery applications

General rectification

DC / DC Converter

Telecommunication

2.3 ± 0.2

0.43 ± 0.2

MECHANICAL DATA

Equivalent : SOD-123

Case : Packed with FRP substrate and epoxy underfilled

Terminals : Pure Tin plated (Lead-Free),

solderable per MIL-STD-750, Method 2026.

Polarity : Laser Cathode band marking

Weight : 0.012 gram

MARKING

Cathode mark

Voltage class

(150V)

PACKING

A15

3,000 pieces per 7" (178mm ± 2mm) reel

4 reels per box

Amps class

Halogen-free type

6 boxes per carton

Absolute Maximum Ratings (Ta = 25 ^oC)

ITEM

Rating

Symbol

Conditions

Unit

Z2PK115H

150

Repetitive peak reverse voltage

Average forward current

VRRM

IF(AV)

1.0

Peak forward surge current

IFSM

8.3ms single half sine-wave

^oC

Operating junction temperature Range

-55 to +150

Storage temperature Range

TSTG

-55 to +150

Electrical characteristics (Ta = 25 ^oC)

ITEM

Symbol

Conditions

Min.

Typ.

Max.

Unit

Forward voltage (NOTE 1)

IF = 1.0A

0.83

0.88

VR = Max. VRRM , Ta = 25 ^oC

Repetitive peak reverse current (NOTE 1)

Junction capacitance

IRRM

1.0

VR = 4V, f = 1.0 MHz

110

Rth(JA)

Rth(JL)

Junction to ambient (NOTE 2)

Junction to lead (NOTE 2)

^oC / W

Thermal resistance

NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.

(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.

REV. 0

2011/07

中文翻译

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