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Z1200A-G PDF预览

Z1200A-G

更新时间: 2024-12-01 01:25:43
品牌 Logo 应用领域
上华 - COMCHIP 测试二极管
页数 文件大小 规格书
6页 125K
描述
Glass passivated chip.

Z1200A-G 技术参数

是否Rohs认证:符合生命周期:Not Recommended
包装说明:O-PALF-W2Reach Compliance Code:compliant
风险等级:5.72Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:1900 Ω最大正向电压 (VF):1.2 V
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
膝阻抗最大值:9990 Ω元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1 W标称参考电压:200 V
最大反向电流:0.1 µA反向测试电压:152 V
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:1.2 mABase Number Matches:1

Z1200A-G 数据手册

 浏览型号Z1200A-G的Datasheet PDF文件第2页浏览型号Z1200A-G的Datasheet PDF文件第3页浏览型号Z1200A-G的Datasheet PDF文件第4页浏览型号Z1200A-G的Datasheet PDF文件第5页浏览型号Z1200A-G的Datasheet PDF文件第6页 
Axial Lead Zener Diode  
1N4728A-G Thru. Z1330A-G  
Zener Voltage: 3.3 to 330 Volts  
DC Power: 1 Watts  
RoHS Device  
Features  
- Glass passivated chip.  
DO-41  
- Low leakage.  
0.033(0.84)  
0.028(0.71)  
DIA.  
1.000(25.40)  
MIN.  
- Built-in strain relief.  
- Low inductance.  
- High peak reverse power dissipation.  
0.205(5.21)  
0.165(4.19)  
- For use in stabilizing and clipping  
with high power rating.  
0.117(2.97)  
0.090(2.29)  
DIA.  
1.000(25.40)  
MIN.  
Mechanical data  
- Case: Molded plastic.  
Dimensions in inches and (millimeter)  
- Epoxy: UL 94V-0 rate flame retardant.  
- Terminals: Solderable per MIL-STD-202,  
- method 208 guranteed.  
- Polarity: Color band denotes cathode end.  
- Mounting position: Any.  
- Approx. weight: 0.35 grams(approx.).  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristics  
Symbol  
Units  
DC power dissipation at TL=50°C (Note 1)  
PD  
1
W
Maximum forward voltage at IF=200 mA  
VF  
1.2  
V
Maximum thermal resistance junction  
to ambient air (Note 2)  
RΘJA  
TJ  
170  
K/W  
°C  
Junction temperature range  
Storage temperature range  
-55 to +175  
-55 to +175  
TSTG  
°C  
Notes:  
1. TL= Lead temperature at 3/8” (9.5mm) from body.  
2. Valid provided that leads are kept at ambient temperature at a distance of 10mm from case.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: D  
Page 1  
QW-BZ007  
Comchip Technology CO., LTD.  

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Zener Diode, 120V V(Z), 10%, 1W, Silicon, Unidirectional, DO-41, ROHS COMPLIANT, PLASTIC P