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Z0405MF0AA2

更新时间: 2024-11-16 12:18:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
8页 88K
描述
4A TRIACS

Z0405MF0AA2 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SFM包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
Factory Lead Time:13 weeks 6 days风险等级:1.65
Is Samacsys:N配置:SINGLE
换向电压的临界上升率-最小值:1 V/us关态电压最小值的临界上升速率:20 V/us
最大直流栅极触发电流:5 mA最大直流栅极触发电压:1.3 V
最大维持电流:5 mAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3最大漏电流:0.5 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:4 A
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

Z0405MF0AA2 数据手册

 浏览型号Z0405MF0AA2的Datasheet PDF文件第2页浏览型号Z0405MF0AA2的Datasheet PDF文件第3页浏览型号Z0405MF0AA2的Datasheet PDF文件第4页浏览型号Z0405MF0AA2的Datasheet PDF文件第5页浏览型号Z0405MF0AA2的Datasheet PDF文件第6页浏览型号Z0405MF0AA2的Datasheet PDF文件第7页 
Z04  
Standard  
4 A Triacs  
Main features  
A2  
A1  
Symbol  
IT(RMS)  
Value  
4
Unit  
A
G
V
DRM/VRRM  
600 to 800  
3 to 25  
V
IGT (Q )  
mA  
1
Description  
A1  
A2  
G
The Z04 series is suitable for general purpose AC  
switching applications. They can be found in  
applications such as home appliances  
(electrovalve, pump, door lock, small lamp  
control), fan speed controllers,...  
TO202-3  
Different gate current sensitivities are available,  
allowing optimized performances when controlled  
directly from microcontrollers.  
Order codes  
Part Number  
Marking  
Z04xxyF(1)  
Z04xxyF(1)  
1. xx = sensitivity, y = voltage  
Table 1.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
Tamb = 25° C  
IT(RMS)  
RMS on-state current (full sine wave)  
4
A
Tl = 30° C  
t = 20 ms  
t = 16.7 ms  
F = 50 Hz  
F = 60 Hz  
tp = 10 ms  
20  
21  
Non repetitive surge peak on-state current  
(full cycle, Tj initial = 25° C)  
ITSM  
A
²
²
²
I t  
I t Value for fusing  
2.2  
A s  
Critical rate of rise of on-state current IG  
2 x IGT , tr 100 ns  
=
dI/dt  
F = 120 Hz Tj = 125° C  
20  
A/µs  
IGM  
Peak gate current  
tp = 20 µs  
Tj = 125° C  
Tj = 125° C  
1.2  
0.2  
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
° C  
May 2006  
Rev 7  
1/8  
www.st.com  
8

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