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Z0402NF0AA2 PDF预览

Z0402NF0AA2

更新时间: 2024-11-17 22:08:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
6页 58K
描述
4A TRIACS

Z0402NF0AA2 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SFM
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.73Is Samacsys:N
配置:SINGLE换向电压的临界上升率-最小值:0.5 V/us
关态电压最小值的临界上升速率:10 V/us最大直流栅极触发电流:3 mA
最大直流栅极触发电压:1.3 V最大维持电流:3 mA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
最大漏电流:0.5 mA元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

Z0402NF0AA2 数据手册

 浏览型号Z0402NF0AA2的Datasheet PDF文件第2页浏览型号Z0402NF0AA2的Datasheet PDF文件第3页浏览型号Z0402NF0AA2的Datasheet PDF文件第4页浏览型号Z0402NF0AA2的Datasheet PDF文件第5页浏览型号Z0402NF0AA2的Datasheet PDF文件第6页 
Z04 Series  
®
STANDARD  
4A TRIACS  
MAIN FEATURES:  
Symbol  
A2  
Value  
4
Unit  
A
G
I
T(RMS)  
A1  
V
/V  
600 to 800  
V
DRM RRM  
I
3 to 25  
mA  
GT (Q )  
1
A1  
A2  
G
DESCRIPTION  
The Z04 series is suitable for general purpose AC  
switching applications. They can be found in  
applications such as touch light dimmers, fan  
controllers, HID lamp ignitors,...  
TO202-3  
(Z04xxF)  
Different gate current sensitivities are available,  
allowing optimized performances when controlled  
directly from microcontrollers.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
RMS on-state current (full sine wave)  
Value  
Unit  
I
TI = 30°C  
Tamb = 25°C  
t = 20 ms  
4
1
A
T(RMS)  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
F = 50 Hz  
F = 60 Hz  
20  
21  
A
TSM  
t = 16.7 ms  
²
²
²
tp = 10 ms  
2.2  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
20  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
1.2  
0.2  
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
July 2003 - Ed: 5  
1/6  

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