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Z02W9.1VS PDF预览

Z02W9.1VS

更新时间: 2024-06-26 08:51:37
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
2页 154K
描述
SOT-23

Z02W9.1VS 数据手册

 浏览型号Z02W9.1VS的Datasheet PDF文件第2页 
Z02W9.1VS  
SEMICONDUCTOR  
ZENER DIODE  
TECHNICAL DATA  
SILICON EPITAXIAL PLANAR DIODE  
CONSTANT VOLTAGE REGULATION APPLICATION.  
REFERENCE VOLTAGE APPLICATION.  
WAVE FORM CLIPPER  
E
L
B
L
DIM MILLIMETERS  
_
+
A
B
C
D
E
G
H
J
2.93 0.20  
1.30+0.20/-0.15  
1.30 MAX  
0.40+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
FEATURES  
2
3
· Small Package : SOT-23  
· Sharp breakdown characteristic.  
· Series type PIN connection  
1
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
P
P
M
3
MAXIMUM RATING (Ta=25)  
1. CATHODE 1  
2. ANODE 2  
D2  
D1  
CHARACTERISTIC  
Power Dissipation  
SYMBOL  
RATING  
200  
UNIT  
mW  
3. ANODE 1 / CATHODE 2  
2
1
PD  
Tj  
SOT-23  
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
-55150  
Marking  
Lot No.  
Type Name  
Z9  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Zener Voltage  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
9.30  
18  
UNIT  
V
VZ  
ZZ  
IR  
IZ=5mA  
(Note1)  
(Note2)  
8.80  
-
-
-
IZ=5mA  
VR=7V  
Dynamic Impedance  
Reverse Current  
-
-
0.5  
μA  
(Note 1) VZ is tested with pulsed (40ms), Single Zener Diode Voltage.  
(Note 2) VZ is measured at IZ by given a very small A.C current signal.  
2020. 10. 05  
Revision No : 1  
1/2  

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