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Z02W100V PDF预览

Z02W100V

更新时间: 2024-11-19 02:50:55
品牌 Logo 应用领域
KEC 二极管齐纳二极管局域网
页数 文件大小 规格书
2页 438K
描述
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE

Z02W100V 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.79配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:100 V
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:1 mABase Number Matches:1

Z02W100V 数据手册

 浏览型号Z02W100V的Datasheet PDF文件第2页 
Z02W100V  
SEMICONDUCTOR  
ZENER DIODE  
TECHNICAL DATA  
SILICON EPITAXIAL PLANAR DIODE  
CONSTANT VOLTAGE REGULATION APPLICATION.  
REFERENCE VOLTAGE APPLICATION.  
WAVE FORM CLIPPER  
E
L
B
L
DIM  
A
MILLIMETERS  
_
2.93+0.20  
B
C
D
E
G
H
J
1.30+0.20/-0.15  
1.30 MAX  
FEATURES  
2
3
Small Package : SOT-23  
Sharp breakdown characteristic.  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
1
0.95  
0.13+0.10/-0.05  
K
L
0.00 ~ 0.10  
0.55  
P
P
MAXIMUM RATING (Ta=25  
)
0.20 MIN  
1.00+0.20/-0.10  
7
M
N
P
CHARACTERISTIC  
Power Dissipation  
SYMBOL  
RATING  
200  
UNIT  
mW  
M
PD  
Tj  
3
Junction Temperature  
Storage Temperature Range  
Operating Temperature  
150  
1. NC  
2. ANODE  
3. CATHODE  
Tstg  
Topr  
-55 150  
-55 150  
2
1
SOT-23  
Marking  
Lot No.  
Type Name  
10A  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
105. 0  
700  
UNIT  
V
VZ  
ZZ  
IR  
IZ=1mA  
Zener Voltage  
(Note1)  
(Note2)  
95. 0  
-
-
-
IZ=1mA  
VR=76V  
Dynamic Impedan  
Reverse Current  
-
-
0.2  
A
(Note 1) VZ is tested with pulsed (40ms)  
(Note 2) VZ is measured at IZ by given a very small A.C current signal.  
2007. 2. 21  
Revision No : 0  
1/2  

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