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Z0109MA

更新时间: 2024-11-25 17:01:15
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
14页 578K
描述
Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended for use in applications requiring direct interfacing to logic ICs and low power gate drivers.

Z0109MA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.63
Is Samacsys:N其他特性:SENSITIVE GATE
配置:SINGLEJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1 A参考标准:IEC-60134
断态重复峰值电压:600 V表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

Z0109MA 数据手册

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Z0109MA  
4Q Triac  
Rev.02 - 19 November 2021  
Product data sheet  
1. General description  
Planar passivated sensitive gate four quadrant triac in a TO92 plastic package intended for use in  
applications requiring direct interfacing to logic ICs and low power gate drivers.  
2. Features and benefits  
Direct interfacing to logic level ICs  
Direct interfacing to low power gate drive circuits  
High blocking voltage capability  
Planar passivated for voltage ruggedness and reliability  
Sensitive gate in four quadrants  
Triggering in all four quadrants  
3. Applications  
General purpose low power motor control  
Home appliances  
Industrial process control  
Low power AC Fan controllers  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
600  
1
V
A
A
RMS on-state current  
full sine wave; Tlead ≤ 45 °C;  
Fig. 1; Fig. 2; Fig. 3  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
8
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
8.5  
A
Tj  
junction temperature  
-
-
125  
Max  
°C  
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Unit  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
-
-
-
-
10  
10  
10  
10  
mA  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G+;  
Tj = 25 °C; Fig. 7  
IH  
holding current  
VD = 12 V; Tj = 25 °C; Fig. 9  
IT = 1 A; Tj = 25 °C; Fig. 10  
-
-
-
10  
mA  
V
VT  
on-state voltage  
1.3  
1.6  

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