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YQ8RSM10SDTF PDF预览

YQ8RSM10SDTF

更新时间: 2024-04-09 19:02:50
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
8页 1851K
描述
The YQ8RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the trade

YQ8RSM10SDTF 数据手册

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YQ8RSM10SDTF  
Schottky Barrier Diode  
(AEC-Q101 qualified)  
Data sheet  
Outline  
V
100  
8
V
A
A
R
I
o
I
140  
FSM  
Features  
High reliability  
Inner Circuit  
Power mold type  
Low V and low I  
F
R
Low capacitance  
Application  
Switching power supply  
Freewheel diode  
Packaging Specifications  
Packing  
Embossed Tape  
Reverse polarity protection  
Reel Size(mm)  
Taping Width(mm)  
Quantity(pcs)  
330  
12  
4000  
Structure  
Trench MOS structure  
Taping Code  
TL1  
Marking  
YQ8RSM10SD  
(T =25ºC unless otherwise specified)  
Absolute Maximum Ratings  
c
Parameter  
Symbol  
Conditions  
Limits  
Unit  
V
V
Repetitive peak reverse voltage  
Duty0.5  
100  
RM  
V
Reverse voltage  
Reverse direct voltage  
100  
V
A
R
60Hzhalf sin waveformresistive load,  
I
o
Average rectified forward current  
Peak forward surge current  
Junction temperature(1)  
Storage temperature  
8
T =155Max.  
c
60Hzhalf sin waveformnon-repetitive,  
I
140  
A
FSM  
T =25℃  
a
T
-
-
175  
j
T
stg  
-55 175  
Note(1) To avoid occurrence of thermal runawayactual board is to be designed to fulfill dP /dT<1/R .  
θJA  
d
j
Attention  
www.rohm.com  
© 2023- ROHMCo., Ltd. All rights reserved.  
1/5  
2023/11/08_Rev.002  

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