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YQ5LAM10ETF PDF预览

YQ5LAM10ETF

更新时间: 2024-04-09 19:00:08
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
9页 1864K
描述
The YQ5LAM10ETF is a highly efficient Schottky Barrier Diode that is designed improving the tradeo

YQ5LAM10ETF 数据手册

 浏览型号YQ5LAM10ETF的Datasheet PDF文件第2页浏览型号YQ5LAM10ETF的Datasheet PDF文件第3页浏览型号YQ5LAM10ETF的Datasheet PDF文件第4页浏览型号YQ5LAM10ETF的Datasheet PDF文件第5页浏览型号YQ5LAM10ETF的Datasheet PDF文件第6页浏览型号YQ5LAM10ETF的Datasheet PDF文件第7页 
YQ5LAM10ETF  
Schottky Barrier Diode  
(AEC-Q101 qualified)  
Data sheet  
Outline  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀꢀ  
V
100  
5
V
A
A
R
I
o
I
100  
FSM  
Features  
ꢀ ꢀ ꢀ  
High reliability  
Inner Circuit  
Small power mold type  
Low V and low I  
F
R
Low capacitance  
Application  
Switching power supply  
Freewheel diode  
Packaging Specifications  
Packing  
Embossed Tape  
Reverse polarity protection  
Reel Size(mm)  
Taping Width(mm)  
Quantity(pcs)  
180  
12  
3000  
TR  
Structure  
Trench MOS structure  
Taping Code  
Marking  
6L  
(T =25ºC unless otherwise specified)  
Absolute Maximum Ratings  
c
Parameter  
Symbol  
Conditions  
Limits  
Unit  
V
V
Repetitive peak reverse voltage  
Duty0.5  
100  
RM  
V
Reverse voltage  
Reverse direct voltage  
100  
V
A
R
Glass epoxy mounted  
60Hzhalf sin waveformresistive load、  
I
o
Average rectified forward current  
Peak forward surge current  
Junction temperature(1)  
Storage temperature  
5
T =105Max.  
c
60Hzhalf sin waveformNon-repetitive、  
I
100  
A
FSM  
one cycleT =25℃  
a
T
-
-
175  
j
T
stg  
-55 175  
Note(1) To avoid occurrence of thermal runawayactual board is to be designed to fulfill dP /dT<1/R .  
th(j-a)  
d
j
Attention  
www.rohm.com  
©2023- ROHMCo., Ltd.All rights reserved.  
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1/6  
2023/09/05_Rev.001  

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