Datasheet > YQ12RSM10SDTF

YQ12RSM10SDTF

更新时间： 2024-03-03 10:11:32

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
8页	1906K
描述
The YQ12RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the trad

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YQ12RSM10SDTF 数据手册

YQ12RSM10SDTF

Schottky Barrier Diode

(AEC-Q101 qualified)

Data sheet

●Outline

100

220

FSM

●Features

High reliability

●Inner Circuit

Power mold type

Low V and low I

Low capacitance

●Application

Switching power supply

Freewheel diode

●Packaging Specifications

Packing

Embossed Tape

Reverse polarity protection

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

330

4000

●Structure

Trench MOS structure

Taping Code

TL1

Marking

YQ12RSM10SD

(T =25ºC unless otherwise specified)

●Absolute Maximum Ratings

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

Duty≦0.5

100

Reverse voltage

Reverse direct voltage

100

60Hzhalf sin waveform，resistive load，

Average rectified forward current

Peak forward surge current

Junction temperature⁽¹⁾

Storage temperature

T =145℃Max.

60Hzhalf sin waveform，non-repetitive，

220

FSM

T =25℃

175

℃

stg

-55 ～ 175

℃

Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dP /dT<1/R .

θJA

Attention

www.rohm.com

1/5

2023/11/08_Rev.002

12 3 4 5 6 7 8

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