Datasheet > YJS2308A

YJS2308A

更新时间： 2024-03-03 10:09:41

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
10页	1651K
描述
SOT-23-6L

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中文翻译

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数据手册

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YJS2308A 数据手册

RoHS

COMPLIANT

YJS2308A

N-Channel and P-Channel Complementary Power MOSFET

Product Summary

NMOS

● V_DS

20V

● I_D

5.6A

● R_DS(ON)( at VGS=4.5V)

● R_DS(ON)( at VGS=2.5V)

● R_DS(ON)( at VGS=1.8V)

PMOS

＜25mohm

＜32mohm

＜49mohm

● V_DS

-20V

● I_D

-3.7A

● R_DS(ON)( at VGS=-4.5V)

● R_DS(ON)( at VGS=-2.5V)

● R_DS(ON)( at VGS=-1.8V)

＜64mohm

＜80mohm

＜110mohm

● 100% ▽V_DSTested

General Description

● Trench Power LV MOSFET technology

● High density cell design for low R_DS(ON)

● High Speed switching

SOT-23-6L

Applications

● Wireless charger

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±10

5.6

-20

±10

-3.7

T_A=25℃

Drain Current

I_D

T_A=70℃

4.5

-3

Pulsed Drain Current ^A

Total Power Dissipation

I_DM

-15

1.3

T_A=25℃

T_A=70℃

P_D

0.8

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJS2308A

2308

3000

30000

120000

7“ reel

1 / 10

S-E068

Rev.3.0,27-Feb-20

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7...10

中文翻译

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