Datasheet > YJS2305A

YJS2305A

更新时间： 2024-04-09 19:01:51

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	715K
描述
SOT-23-6L

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YJS2305A 数据手册

RoHS

COMPLIANT

YJS2305A

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-5.4A

● R_DS(ON)( at V_GS=-4.5V)

＜39mohm

● R_DS(ON)( at V_GS=-2.5V)

● R_DS(ON)( at V_GS=-1.8V)

● 100% ▽V_DSTested

＜49mohm

＜63mohm

General Description

● Trench Power LV MOSFET technology

● High Power and Current handing capability

● Low Gate Charge

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery protection

● Power management

● Load switch

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-20

±10

-5.4

T_A=25℃

Drain Current

I_D

T_A=70℃

-4.4

Pulsed Drain Current ^A

Total Power Dissipation

I_DM

-22

T_A=25℃

T_A=70℃

1.2

P_D

0.8

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

104

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJS2305A

2305

3000

30000

120000

7“ reel

1 / 6

S-E009

Rev.3.1,18-Jan-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

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