Datasheet > YJS2301A

YJS2301A

更新时间： 2024-04-09 19:01:21

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	1320K
描述
SOT-23-6L

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数据手册

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YJS2301A 数据手册

RoHS

COMPLIANT

YJS2301A

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-3.7A

● R_DS(ON)( at V_GS=-4.5V)

● R_DS(ON)( at V_GS=-2.5V)

● R_DS(ON)( at V_GS=-1.8V)

● 100% ▽V_DSTested

＜51mohm

＜67mohm

＜91mohm

General Description

● Trench Power LV MOSFET technology

● Low RDS(ON)

● Low Gate Charge

SOT-23-6L

Applications

● Video monitor

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-20

±10

-3.7

T_A=25℃

Drain Current

I_D

T_A=70℃

-3

Pulsed Drain Current ^A

Total Power Dissipation

I_DM

-16

T_A=25℃

T_A=70℃

1.2

P_D

0.8

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

104

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJS2301A

3000

30000

120000

7“ reel

1 / 7

S-E036

Rev.3.0,25-Feb-20

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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