Datasheet > YJS15G10C

YJS15G10C

更新时间： 2024-04-09 19:00:45

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	856K
描述
SOP-8

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中文翻译

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数据手册

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YJS15G10C 数据手册

RoHS

COMPLIANT

YJS15G10C

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

● I_D

15A

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

＜9.5 mohm

General Description

● Split Gate Trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● DC/DC Primary Side Switch

● Telecom/Server

● Synchronous Rectification

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Maximum

100

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_A=25℃

Drain Current

I_D

T_A=100℃

9.5

Pulsed Drain Current ^A

I_DM

Avalanche Energy, Single Pulse(L=0.5mH)

Total Power Dissipation ^B

E_AS

200

P_D

3.8

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^C

Thermal Resistance Junction-to-Lead

t≤10S

Steady-State

℃/W

R_θJL

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJS15G10C

Q15G10C

4000

8000

64000

13“ reel

1 / 6

S-E408

Rev.3.2,22-Mar-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

中文翻译

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