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YJS15G10A PDF预览

YJS15G10A

更新时间: 2024-11-19 15:19:03
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
6页 929K
描述
SOP-8

YJS15G10A 数据手册

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RoHS  
COMPLIANT  
YJS15G10A  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
100V  
ID  
15A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
100% EAS Tested  
9.5 mohm  
12.5 mohm  
General Description  
Split Gate Trench MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
● Moisture Sensitivity Level 3  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
DC/DC Primary Side Switch  
Telecom/Server  
Synchronous Rectification  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Maximum  
100  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
±20  
15  
V
TA=25℃  
Drain Current  
ID  
A
TA =100℃  
9.5  
Pulsed Drain Current A  
IDM  
75  
A
mJ  
W
Avalanche Energy, Single Pulse(L=0.5mH)  
Total Power Dissipation B  
EAS  
200  
PD  
3.8  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
25  
Max  
32  
Units  
Thermal Resistance Junction-to-Ambient C  
Thermal Resistance Junction-to-Ambient C  
Thermal Resistance Junction-to-Lead  
t10S  
Steady-State  
Steady-State  
47  
60  
/W  
RθJL  
13  
20  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
PREFERED P/N  
Marking  
DELIVERY MODE  
CODE  
YJS15G10A  
F2  
Q15G10A  
4000  
8000  
64000  
13reel  
1 / 6  
S-E407  
Rev.3.2,22-Mar-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com