RoHS
COMPLIANT
YJS15G10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
● ID
15A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
<9.5 mohm
<12.5 mohm
General Description
● Split Gate Trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● DC/DC Primary Side Switch
● Telecom/Server
● Synchronous Rectification
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Maximum
100
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
15
V
TA=25℃
Drain Current
ID
A
TA =100℃
9.5
Pulsed Drain Current A
IDM
75
A
mJ
W
Avalanche Energy, Single Pulse(L=0.5mH)
Total Power Dissipation B
EAS
200
PD
3.8
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
25
Max
32
Units
Thermal Resistance Junction-to-Ambient C
Thermal Resistance Junction-to-Ambient C
Thermal Resistance Junction-to-Lead
t≤10S
Steady-State
Steady-State
47
60
℃/W
RθJL
13
20
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJS15G10A
F2
Q15G10A
4000
8000
64000
13“ reel
1 / 6
S-E407
Rev.3.2,22-Mar-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com