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YJS12G10B PDF预览

YJS12G10B

更新时间: 2024-11-19 15:19:27
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
7页 806K
描述
SOP-8

YJS12G10B 数据手册

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RoHS  
COMPLIANT  
YJS12G10B  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
100 V  
12A  
ID  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
19mΩ  
24mΩ  
General Description  
Split gate trench MOSFET technology  
Low RDS(on) & FOM  
Extremely low switching loss  
Excellent stability and uniformity  
● Moisture Sensitivity Level 3  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
● Power management  
● Portable equipment  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
100  
±20  
V
V
12  
TA=25  
Drain Current  
ID  
A
A
7.6  
TA=100℃  
Pulsed Drain Current A  
Total Power Dissipation B  
IDM  
50  
4.1  
TA=25℃  
PD  
W
1.6  
TA=100℃  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
Typ  
Max  
Units  
Thermal Resistance Junction-to-Ambient C  
Steady-State  
RθJA  
25  
30  
/W  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJS12G10B  
F2  
Q12G10B  
4000  
8000  
64000  
13reel  
1 / 7  
S-E244  
Rev.1.0,04-Aug-22  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com