RoHS
COMPLIANT
YJS12G10B
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100 V
12A
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
< 19mΩ
< 24mΩ
General Description
● Split gate trench MOSFET technology
● Low RDS(on) & FOM
● Extremely low switching loss
● Excellent stability and uniformity
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power management
● Portable equipment
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
100
±20
V
V
12
TA=25℃
Drain Current
ID
A
A
7.6
TA=100℃
Pulsed Drain Current A
Total Power Dissipation B
IDM
50
4.1
TA=25℃
PD
W
℃
1.6
TA=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient C
Steady-State
RθJA
25
30
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJS12G10B
F2
Q12G10B
4000
8000
64000
13“ reel
1 / 7
S-E244
Rev.1.0,04-Aug-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com