RoHS
COMPLIANT
YJS10N04A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40 V
● ID
10 A
● RDS(ON)( at VGS= 10V)
● RDS(ON)( at VGS= 4.5V)
<15mohm
<24mohm
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● High current load applications
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
40
±20
10
V
V
TA=25℃
Drain Current
ID
A
TA=100℃
7.0
Pulsed Drain Current A
IDM
50
A
Single Pulse Avalanche Energy B
EAS
70
mJ
TA=25℃
3.0
Total Power Dissipation
PD
W
TA=100℃
1.2
RθJL
RθJA
30
Thermal Resistance Junction-to-Lead C
Junction and Storage Temperature Range
℃/ W
41.5
-55~+150
TJ ,TSTG
℃
Ordering Information (Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJS10N04A
F2
Q10N04
4000
8000
64000
13“ reel
1 / 7
S-E610
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com