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YJS10N04A PDF预览

YJS10N04A

更新时间: 2024-11-19 15:19:47
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扬杰 - YANGJIE /
页数 文件大小 规格书
7页 1208K
描述
SOP-8

YJS10N04A 数据手册

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RoHS  
COMPLIANT  
YJS10N04A  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
40 V  
● ID  
10 A  
● RDS(ON)( at VGS= 10V)  
● RDS(ON)( at VGS= 4.5V)  
15mohm  
24mohm  
General Description  
● Trench Power LV MOSFET technology  
● Excellent package for heat dissipation  
● High density cell design for low RDS(ON)  
Applications  
● High current load applications  
● Load switching  
● Hard switched and high frequency circuits  
● Uninterruptible power supply  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
40  
±20  
10  
V
V
TA=25℃  
Drain Current  
ID  
A
TA=100℃  
7.0  
Pulsed Drain Current A  
IDM  
50  
A
Single Pulse Avalanche Energy B  
EAS  
70  
mJ  
TA=25℃  
3.0  
Total Power Dissipation  
PD  
W
TA=100℃  
1.2  
RθJL  
RθJA  
30  
Thermal Resistance Junction-to-Lead C  
Junction and Storage Temperature Range  
/ W  
41.5  
-55+150  
TJ ,TSTG  
Ordering Information (Example)  
PACKING  
PREFERED P/N  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
Marking  
DELIVERY MODE  
CODE  
YJS10N04A  
F2  
Q10N04  
4000  
8000  
64000  
13“ reel  
1 / 7  
S-E610  
Rev.3.1,14-Oct-20  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com