Datasheet > YJS07NP03B

YJS07NP03B

更新时间： 2024-11-21 17:02:11

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
10页	659K
描述
SOP-8

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中文翻译

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数据手册

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YJS07NP03B 数据手册

RoHS

COMPLIANT

YJS07NP03B

N-Channel and P-Channel Complementary MOSFET

Product Summary

NMOS

● V_DS

30V

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜18mΩ

＜30mΩ

PMOS

● V_DS

-30V

● I_D

-7A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

＜20mΩ

＜28mΩ

● 100% EAS Tested

General Description

● Trench Power LV MOSFET technology

● High density cell design for low RDS(ON)

● High Speed switching

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Wireless charger

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

NMOS

PMOS

-30

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

±20

V_GS

±20

-7

T_A=25℃

Drain Current

I_D

4.4

-4.4

T_A=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-100

EAS

1.9

2.2

T_A=25℃

Total Power Dissipation ^C

P_D

0.75

-55～+150

0.9

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

NMOS

PMOS

Symbol

Units

Typ

Max

Typ

Max

Thermal Resistance Junction-to-Ambient ^D

Steady-State

R_θJA

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJS07NP03B

Q07NP03B

4000

8000

64000

13“ reel

1 / 10

S-E321

Rev.1.0,27-Mar-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7...10

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