Datasheet > YJS03N10A

YJS03N10A

更新时间： 2024-03-03 10:10:28

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	744K
描述
SOT-23-6L

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数据手册

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YJS03N10A 数据手册

RoHS

COMPLIANT

YJS03N10A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

● I_D

3.0A

● R_DS(ON)( at V_GS= 10V)

● R_DS(ON)( at V_GS= 4.5V)

＜120mohm

＜140mohm

General Description

● Trench Power MV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● DC-DC Converters

● Power management functions

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

100

Unit

Drain-source Voltage

V_DS

Gate-source Voltage

V_GS

±20

T_A=25℃

T_A=70℃

Drain Current

I_D

2.4

Pulsed Drain Current ^A

Single Pulse Avalanche Energy

Total Power Dissipation @ T_A=25℃

I_DM

E_AS

1.5

P_D

Thermal Resistance Junction-to-Ambient ^B

Thermal Resistance From Junction To Lead

Junction and Storage Temperature Range

R_θJA

RthJL

T_J,T_STG

℃/ W

℃/W

℃

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJS03N10A

1003

3000

30000

120000

1 / 7

S-E636

Rev.3.1,13-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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