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YJR60G10A PDF预览

YJR60G10A

更新时间: 2024-11-03 15:19:23
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扬杰 - YANGJIE /
页数 文件大小 规格书
8页 694K
描述
TO-251

YJR60G10A 数据手册

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RoHS  
COMPLIANT  
YJR60G10A  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
100V  
60A  
ID  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
100% EAS Tested  
100% VDS Tested  
12mΩ  
15mΩ  
General Description  
Split gate trench MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
Power switching application  
Uninterruptible power supply  
DC-DC convertor  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
100  
V
V
±20  
9
TA=25  
5
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
60  
37  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
170  
A
EAS  
82  
mJ  
2.5  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
1
73  
Total Power Dissipation C  
PD  
W
29  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
40  
Max  
50  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
1.4  
1.7  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJR60G10A  
B1  
YJR60G10A  
75  
/
29700  
Tube  
1 / 8  
S-E357  
Rev.1.0,13-Jun-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com