RoHS
COMPLIANT
YJR60G10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
60A
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<12mΩ
<15mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
100
V
V
±20
9
TA=25℃
5
TA=100℃
TC=25℃
Drain Current
ID
A
60
37
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
170
A
EAS
82
mJ
2.5
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
73
Total Power Dissipation C
PD
W
29
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
1.4
1.7
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJR60G10A
B1
YJR60G10A
75
/
29700
Tube
1 / 8
S-E357
Rev.1.0,13-Jun-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com