Datasheet > YJQ35P03B

YJQ35P03B

更新时间： 2024-11-03 15:19:43

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	470K
描述
DFN3333-8L

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中文翻译

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数据手册

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YJQ35P03B 数据手册

RoHS

COMPLIANT

YJQ35P03B

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-30 V

● I_D

-35 A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

● 100% EAS Tested

＜14.5 mΩ

＜22 mΩ

General Description

● Trench Power LV MOSFET technology

● High density cell design for Low RDS(ON)

● High Speed switching

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery protection

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-30

±20

-8

T_A=25℃

-5

T_A=100℃

T_C=25℃

Drain Current

I_D

-35

-22

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-100

EAS

1.6

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

0.6

Total Power Dissipation ^C

P_D

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

2.8

3.4

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJQ35P03B

Q35P03B

5000

10000

100000

13“ reel

1 / 7

S-E293

Rev.1.0,23-Feb-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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