Datasheet > YJQ35N04AQ

YJQ35N04AQ

更新时间： 2024-11-03 15:19:47

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	305K
描述
DFN3333-8L

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中文翻译

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数据手册

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YJQ35N04AQ 数据手册

RoHS

COMPLIANT

YJQ35N04AQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

40V

● I_D

35A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

＜8.0mΩ

＜13.0mΩ

General Description

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● Power switching application

● Uninterruptible power supply

● DC-DC convertor

● 12V Automotive systems

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

12.5

T_A=25℃

T_A=100℃

T_C=25℃

Drain Current

I_D

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

160

144

2.2

EAS

T_A=25℃

0.9

T_A=100℃

T_C=25℃

Total Power Dissipation ^C

P_D

T_C=100℃

Steady-State

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Ambient ^D

Junction and Storage Temperature Range

R_θJC

R_θJA

3.1

℃/W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJQ35N04AQ

Q35N04

5000

10000

100000

13“ reel

1 / 7

S-D253

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.2,13-Oct-23

12 3 4 5 6 7

中文翻译

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