Datasheet > YJQ35N04A

YJQ35N04A

更新时间： 2024-11-03 15:19:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	654K
描述
DFN3333-8L

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中文翻译

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数据手册

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YJQ35N04A 数据手册

RoHS

COMPLIANT

YJQ35N04A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

40 V

● I_D

35 A

● R_DS(ON)( at V_GS= 10V)

● R_DS(ON)( at V_GS= 4.5V)

● 100% UIS Tested

● 100% ▽VDS Tested

＜8.0mohm

＜13mohm

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

Applications

● High current load applications

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_A=25℃

Drain Current

I_D

T_A=100℃

Pulsed Drain Current ^A

I_DM

160

Single Pulse Avalanche Energy ^B

E_AS

120

T_C=25℃

T_A=25℃

Total Power Dissipation

P_D

4.1

R_θJC

R_θJA

3.1

Thermal Resistance Junction-to-Case

℃/ W

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJQ35N04A

Q35N04

5000

10000

100000

13“ reel

1 / 7

S-E621

Rev.3.0,20-Feb-20

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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