RoHS
COMPLIANT
YJQ35N03A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
30V
● ID
55A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<6.5mΩ
<12mΩ
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● High current load applications
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
30
VGS
±20
V
12
TA=25℃
7.5
TA=100℃
TC=25℃
Drain Current
ID
A
55
34
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
200
A
EAS
72
mJ
2
0.8
TA=25℃
TA=100℃
TC=25℃
TC =100℃
Total Power Dissipation C
PD
W
41
16
-55~+150
Junction and Storage Temperature Range
TJ ,TSTG
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
50
Max
60
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
2.5
3
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJQ35N03A
F1
Q35N03A
5000
10000
100000
13“ reel
1 / 8
S-E377
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,3-Jan-24