Datasheet > YJQ30N03A

YJQ30N03A

更新时间： 2024-11-03 15:18:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	725K
描述
DFN3333-8L

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中文翻译

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数据手册

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YJQ30N03A 数据手册

RoHS

COMPLIANT

YJQ30N03A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

30V

● I_D

30A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

＜9 mohm

＜13 mohm

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● High current load applications

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

V_DS

Gate-source Voltage

Drain Current

V_GS

±20

T_A=25℃

T_A=100℃

T_C=25℃

I_D

T_C=100℃

Pulsed Drain Current ^A

Total Power Dissipation

Single Pulse Avalanche Energy ^B

I_DM

115

2.5

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

P_D

60.5

E_AS

R_θJC

℃/ W

℃

Thermal Resistance Junction-to-Case ^C

Thermal Resistance Junction-to-Ambient ^C

Junction and Storage Temperature Range

7.1

R_θJA

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJQ30N03A

Q30N03

5000

10000

100000

13“ reel

1 / 7

S-E613

Rev.3.4,24-Nov-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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