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YJN290G10H PDF预览

YJN290G10H

更新时间: 2024-11-21 17:02:03
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扬杰 - YANGJIE /
页数 文件大小 规格书
8页 371K
描述
TO-247

YJN290G10H 数据手册

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RoHS  
COMPLIANT  
YJN290G10H  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
100V  
290A  
● ID  
● RDS(ON)( at VGS=10V)  
● 100% EAS Tested  
● 100% VDS Tested  
2.4mΩ  
General Description  
● Split Gate Trench MOSFET technology  
● Excellent package for heat dissipation  
● High density cell design for low RDS(ON)  
● Epoxy Meets UL 94 V-0 Flammability Rating  
● Halogen Free  
Applications  
● Load switch  
● Battery management  
● Solar  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
100  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
±20  
V
31  
TA=25  
21  
TA=100℃  
TC=25℃  
Drain Current  
ID  
A
290  
205  
TC =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
1160  
902.5  
6
A
EAS  
mJ  
TA=25℃  
TA=100℃  
TC=25℃  
TC =100℃  
3
Total Power Dissipation C  
PD  
W
375  
187  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+175  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
20  
Max  
25  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
Steady-State  
Steady-State  
/W  
RθJC  
0.32  
0.4  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJN290G10H  
B1  
YJN290G10H  
30  
360  
1800  
Tube  
1 / 8  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
S-E490  
Rev.1.0,23-Jan-24