RoHS
COMPLIANT
YJN290G10H
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
290A
● ID
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
● 100% ▽VDS Tested
<2.4mΩ
General Description
● Split Gate Trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Load switch
● Battery management
● Solar
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
100
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
V
31
TA=25℃
21
TA=100℃
TC=25℃
Drain Current
ID
A
290
205
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
1160
902.5
6
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
3
Total Power Dissipation C
PD
W
375
187
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
20
Max
25
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.32
0.4
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJN290G10H
B1
YJN290G10H
30
360
1800
Tube
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Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-E490
Rev.1.0,23-Jan-24