Datasheet > YJM05N06A

YJM05N06A

更新时间： 2024-12-01 17:00:47

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	503K
描述
SOT-223

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中文翻译

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数据手册

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YJM05N06A 数据手册

RoHS

COMPLIANT

YJM05N06A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

5.0A

● R_DS(ON)( at V_GS= 10V)

● R_DS(ON)( at V_GS= 4.5V)

＜44mohm

＜49mohm

General Description

● Trench Power MV MOSFET technology

●High density cell design for Low R_DS(ON)

● High Speed switching

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery protection

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

±20

V_GS

5.0

T_A=25℃ @ Steady State

T_A=70℃ @ Steady State

Drain Current

I_D

4.0

Pulsed Drain Current ^A

I_DM

P_D

2.5

Total Power Dissipation @ T_A=25℃

Thermal Resistance Junction-to-Ambient @ Steady State ^B

Junction and Storage Temperature Range

R_θJA

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

13“ reel

CODE

2500

40000

25000

YJM05N06A

6005

2500

5000

13“ reel

1 / 7

S-E628

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.3.2,03-Nov-22

12 3 4 5 6 7

中文翻译

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