RoHS
COMPLIANT
YJL3439KADW
N-Channel and P-Channel Complementary MOSFET
Product Summary
NMOS
● VDS
20V
● ID
0.8A
● RDS(ON)( at VGS=4.5V)
● RDS(ON)( at VGS=2.5V)
● RDS(ON)( at VGS=1.8V)
<300mΩ
<400mΩ
<950mΩ
● ESD Protected Up to 2.0KV (HBM)
PMOS
● VDS
-20V
● ID
-0.5A
● RDS(ON)( at VGS=-4.5V)
● RDS(ON)( at VGS=-2.5V)
● RDS(ON)( at VGS=-1.8V)
<850mΩ
<1200mΩ
<2000mΩ
● ESD Protected Up to 2.0KV (HBM)
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Interfacing, Logic switch
● Load switch
● Power management
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
NMOS
20
PMOS
-20
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±10
±10
V
0.8
-0.5
TA=25℃
Drain Current
ID
A
A
0.5
-0.3
TA=100℃
Pulsed Drain Current A
Total Power Dissipation B
IDM
3
-2
0.29
0.11
-55~+150
0.27
0.1
TA=25℃
PD
W
℃
TA=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
■Thermal resistance
Parameter
NMOS
PMOS
Symbol
Units
Typ
Max
Typ
380
Max
Thermal Resistance Junction-to-Ambient C
Steady-State
RθJA
350
420
460
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJL3439KADW
F2
49KA
3000
30000
120000
7“ reel
1 / 10
S-E388
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,25-Sep-23