Datasheet > YJL3415KCQ

YJL3415KCQ

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	293K
描述
SOT-23

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中文翻译

获取价格

数据手册

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YJL3415KCQ 数据手册

RoHS

COMPLIANT

YJL3415KCQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20 V

● I_D

- 3.9A

● R_DS(ON)( at V_GS=-4.5V)

● R_DS(ON)( at V_GS=-2.5V)

＜45 mΩ

＜75 mΩ

● ESD Protected Up to 2.0KV (HBM)

General Description

● Split gate trench MOSFET technology

● Low R_DS(on)& FOM

● Extremely low switching loss

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Part no. with suffix “Q” means AEC-Q101 qualified

● Halogen Free

Applications

● Power management

● Portable equipment

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-20

±10

-3.9

T_A=25℃

Drain Current

I_D

-2.4

T_A=100℃

Pulsed Drain Current ^A

Total Power Dissipation ^C

I_DM

-23

T_A=25℃

P_D

0.4

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Steady-State

R_θJA

100

120

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJL3415KCQ

3415C

3000

30000

120000

7“ reel

1 / 6

S-S4757

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.2,11-Jul-23

12 3 4 5 6

中文翻译

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