RoHS
COMPLIANT
YJL3404AQ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
30V
● ID
5.6A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<29mohm
<40mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
● Part no. with suffix “Q” means AEC-Q101 qualified
Applications
● Battery protection
● Load switch
● Power management
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
30
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
V
5.6
TA=25℃
Drain Current
ID
A
4.5
TA=70℃
Pulsed Drain Current A
Total Power Dissipation
IDM
30
A
W
1.2
TA=25℃
TA=70℃
PD
0.8
W
Thermal Resistance Junction-to-Ambient B
Junction and Storage Temperature Range
RθJA
104
℃/ W
℃
TJ ,TSTG
-55~+150
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJL3404AQ
F2
R4.
3000
30000
120000
7“ reel
1 / 7
S-S3356
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,12-Apr-22