RoHS
COMPLIANT
YJL3404AL
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
30V
6A
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
< 24mΩ
< 34mΩ
General Description
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery protection
● Load switch
● Power management
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
30
±20
V
V
6
TA=25℃
Drain Current
ID
A
A
3.8
TA=100℃
Pulsed Drain Current A
Total Power Dissipation B
IDM
30
1.0
TA=25℃
PD
W
℃
0.4
TA=100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient C
Steady-State
RθJA
100
120
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJL3404AL
F2
R4.
3000
30000
120000
7“ reel
1 / 7
S- E247
Rev.1.0,26-Aug-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com