RoHS
COMPLIANT
YJL3401A
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-30V
● ID
-4.4A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● RDS(ON)( at VGS=-2.5V)
<55mohm
<66mohm
<94mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery protection
● Power management
● Load switch
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
-30
±12
-4.4
V
V
TA=25℃
Drain Current
ID
IDM/ISM
PD
A
-3.5
TA=70℃
Pulsed Drain Current A
Total Power Dissipation
-27
A
W
TA=25℃
TA=70℃
1.2
0.8
W
Thermal Resistance Junction-to-Ambient B
Junction and Storage Temperature Range
RθJA
104
℃/ W
℃
TJ ,TSTG
-55~+150
Ordering Information (Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJL3401A
F2
3401.
3000
30000
120000
7“ reel
1 / 7
S-E029
Rev.3.2,29-Nov-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com