Datasheet > YJL3400A

YJL3400A

更新时间： 2024-11-26 15:18:43

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	863K
描述
SOT-23

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中文翻译

获取价格

数据手册

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YJL3400A 数据手册

RoHS

COMPLIANT

YJL3400A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

30V

● I_D

5.6A

● R_DS(ON)( at V_GS=10V)

＜25mohm

● R_DS(ON)( at V_GS=4.5V)

● R_DS(ON)( at V_GS=2.5V)

＜31mohm

＜45mohm

General Description

● Trench Power LV MOSFET technology

● High density cell design for low R_DS(ON)

● High Speed switching

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery protection

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±12

5.6

T_A=25℃

Drain Current

I_D

T_A=70℃

4.5

Pulsed Drain Current ^A

Total Power Dissipation

I_DM

T_A=25℃

T_A=70℃

1.2

P_D

0.8

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

104

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJL3400A

3400.

3000

30000

120000

7“ reel

1 / 8

S-E011

Rev.3.1,29-Jun-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7 8

中文翻译

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