Datasheet > YJL2302A

YJL2302A

更新时间： 2024-03-03 10:10:50

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	1240K
描述
SOT-23

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数据手册

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YJL2302A 数据手册

RoHS

COMPLIANT

YJL2302A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

20V

● I_D

4.3A

● R_DS(ON)( at V_GS= 4.5V)

● R_DS(ON)( at V_GS= 2.5V)

＜ 27mohm

＜ 37mohm

General Description

● Trench Power LV MOSFET technology

● High Density Cell Design for Low R_DS(ON)

● High Speed switching

Applications

● Battery protection

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±10

4.3

T_A=25℃

Drain Current

I_D

T_A=70℃

3.4

Pulsed Drain Current ^A

I_DM

17.2

Total Power Dissipation @ T_A=25℃ Steady State

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

P_D

R_θJA

125

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJL2302A

.2302.

3000

30000

120000

7“ reel

1 / 7

S-E667

Rev.3.0,11-Nov-20

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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