Datasheet > YJL2301HQ

YJL2301HQ

更新时间： 2024-09-28 17:01:23

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	291K
描述
SOT-23

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中文翻译

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数据手册

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YJL2301HQ 数据手册

RoHS

COMPLIANT

YJL2301HQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-2.4A

● R_DS(ON)( at V_GS=-4.5V)

＜95mohm

● ESD Protected Up to 2.0KV (HBM)

General Description

● Trench Power LV MOSFET technology

● High Power and Current handing capability

● Low Gate Charge

● Part no. with suffix “Q” means AEC-Q101 qualified

● Moisture Sensitivity Level 1

Applications

● PWM applications

● Power management

● Load switch

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

-20

Unit

Drain-source Voltage

V_DS

Gate-source Voltage

Drain Current

V_GS

±12

-2.4

T_A=25℃

I_D

-1.5

T_A=100℃

T_A=25℃

T_A=100℃

890

Total Power Dissipation

Pulsed Drain Current ^A

P_D

350

I_DM

-10

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

Typ

Max

140

Units

Thermal Resistance Junction-to-Ambient ^B

Steady-State

R_θJA

115

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

2301H.

DELIVERY MODE

CODE

YJL2301HQ

3000

30000

120000

7“ reel

1 / 6

S-S4868

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,27-Feb-23

12 3 4 5 6

中文翻译

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