Datasheet > YJL2301CQ

YJL2301CQ

更新时间： 2024-11-22 15:18:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	339K
描述
SOT-23

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中文翻译

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数据手册

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YJL2301CQ 数据手册

RoHS

COMPLIANT

YJL2301CQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-3.4A

● R_DS(ON)( at V_GS=-4.5V)

＜51mohm

● R_DS(ON)( at V_GS=-2.5V)

● R_DS(ON)( at V_GS=-1.8V)

＜67mohm

＜91mohm

General Description

● Trench Power LV MOSFET technology

● High Power and Current handing capability

● Low Gate Charge

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● PWM applications

● Power management

● Load switch

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

-20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±10

-3.4

T_A=25℃

Drain Current

I_D

-2.7

T_A=70℃

Pulsed Drain Current ^A

Total Power Dissipation^B

I_DM

-14

T_A=25℃

T_A=70℃

P_D

0.64

125

Thermal Resistance Junction-to-Ambient ^C

Junction and Storage Temperature Range

R_θJA

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJL2301CQ

S1.

3000

30000

120000

7“ reel

1 / 6

S-S3545

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.2,5-Jul-23

12 3 4 5 6

中文翻译

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